It is important to note that these devices are called bipolar devices because both holes and electrons are responsible for the conductivity inside the transistor.

The D13009K is an NPN transistor where electrons are the major charge carriers.

Bipolar junction transistors are divided into two main types i.e.

The p-doped layer sits between the two n-doped layers. Two are n-doped layers and one is a p-doped layer.

The emitter-base voltage is 9V which details that it requires 9V to start the transistor action and bias this device.

This phenomenon is used for amplification purposes. It generates a large current across emitter and collector terminals by changing a small current at the base side.

This component contains three terminals named base, collector, and emitter.

It is widely employed for switching and amplification purposes.

D13009K is an NPN bipolar junction transistor that is a high voltage fast switching power device.

I recommend you check out this post all the way through as I’ll demonstrate the complete Introduction to D13009K covering datasheet, pinout, power ratings, applications, and physical dimensions. The power dissipation is 100W which features the amount of power this chip dissipates during the working of this integrated chip. The small current change at one pair of terminals is used to produce a large current change across the remaining terminals.

This chip is mainly used in amplification and switching applications. The collector current of this device is 12A which projects it can endure load under 12A. In this post today, I’ll walk you through the Introduction to D13009K.ĭ13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors.

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